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| 型號(hào)： | 934056643127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 54 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 12/13頁(yè) |
| 文件大?。?/td> | 283K |
| 代理商： | 934056643127 |
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Philips Semiconductors
PHP54N06T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 14 February 2001
8 of 13
9397 750 08022
Philips Electronics N.V. 2001. All rights reserved.
VDS =25V
Tj =25 °C; ID =40A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
VGS =0V
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
03nc61
0
20
40
60
80
100
120
0
2
46
8
10
VGS (V)
ID
Tj = 25
oC
Tj = 175
o
C
(A)
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
VDD = 11 V
VDD = 44 V
003aaa068
VGS
(V)
QG (nC)
03nc58
0
20
40
60
80
100
120
0.0
0.5
1.0
1.5
VSD (V)
IS
Tj = 25
oC
Tj = 175
oC
(A)
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