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參數(shù)資料
| 型號(hào)： | 934056643127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 54 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 283K |
| 代理商： | 934056643127 |
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Philips Semiconductors
PHP54N06T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 14 February 2001
2 of 13
9397 750 08022
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
55
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
54
A
Ptot
total power dissipation
Tmb =25 °C
118
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID =25A
Tj =25 °C17
20
m
Tj = 175 °C
40
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
55
V
VDGR
drain-gate voltage (DC)
RGS =20k
55
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V;
54
A
38
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
217
A
Ptot
total power dissipation
118
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
54
A
ISM
peak source (diode forward) current
Tmb =25 °C; pulsed; tp ≤ 10 s
217
A
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID =48A;
VDS ≤ 55 V; VGS = 10 V; RGS =50 ;
starting Tmb =25 °C
115
mJ
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