參數(shù)資料
型號(hào): 934056646127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 73 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 10/13頁
文件大?。?/td> 260K
代理商: 934056646127
Philips Semiconductors
PHP73N06T; PHB73N06T
TrenchMOS standard level FET
Product data
Rev. 02 — 5 July 2002
6 of 13
9397 750 09938
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
003aaa086
0
20
40
60
80
0
0.5
1
1.5
2
VDS (V)
ID
(A)
8.5 V
Tj = 25 °C
VGS = 4.5 V
10 V
5.5 V
5 V
6 V
6.5 V
7.5 V
003aa087
0
20
40
60
80
024
68
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25 °C
175
°C
003aaa088
0
10
20
30
0
2040
6080
ID (A)
RDSon
(m
)
8.5 V
Tj = 25 °C
10 V
VGS = 7.5 V
03aa28
0
0.6
1.2
1.8
2.4
-60
0
60
120
180
Tj (°C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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