參數(shù)資料
型號: 934056646127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 73 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 9/13頁
文件大小: 260K
代理商: 934056646127
Philips Semiconductors
PHP73N06T; PHB73N06T
TrenchMOS standard level FET
Product data
Rev. 02 — 5 July 2002
5 of 13
9397 750 09938
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 A; VGS = 0 V
60
--V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS =VGS; Figure 9
Tj =25 °C
234V
Tj = 175 °C
1
--V
IDSS
drain-source leakage current
VDS =55V; VGS =0V
Tj =25 °C
-
0.05
10
A
Tj = 175 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
-
2
100
nA
RDSon
drain-source on-state resistance
VGS = 10 V; ID =25A; Figure 7 and 8
Tj =25 °C
-
12
14
m
Tj = 175 °C
--28
m
Dynamic characteristics
Qg(tot)
total gate charge
ID = 50 A; VDD =44V; VGS =10V; Figure 13
-54
-
nC
Qgs
gate-source charge
-
10
-
nC
Qgd
gate-drain (Miller) charge
-
19
-
nC
Ciss
input capacitance
VGS =0V; VDS = 25 V; f = 1 MHz; Figure 11
-
1848 2464 pF
Coss
output capacitance
-
421
506
pF
Crss
reverse transfer capacitance
-
231
317
pF
td(on)
turn-on delay time
VDD =30V; RD = 1.2 ; VGS =5V; RG =10
-
1726ns
tr
rise time
-
79
119
ns
td(off)
turn-off delay time
-
57
80
ns
tf
fall time
-
5171ns
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 12
-
0.85
1.2
V
trr
reverse recovery time
IS = 73 A; dIS/dt = 100 A/s;
VGS = 10 V; VR =30V
-54
-
ns
Qr
recovered charge
-
0.12
-
C
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