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參數(shù)資料
| 型號： | 934056648118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大小： | 251K |
| 代理商： | 934056648118 |
Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 07 March 2001
2 of 14
9397 750 08108
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol
Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
55
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
75
A
Ptot
total power dissipation
Tmb =25 °C
200
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
Tj =25 °C; VGS =10V; ID =25A
7.2
8
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
55
V
VDGR
drain-gate voltage (DC)
Tj =25to175 °C; RGS =20k
55
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
75
A
Tmb = 100 °C; VGS =10V
52.5
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
400
A
Ptot
total power dissipation
200
W
Tstg
storage temperature
55
175
°C
Tj
operating junction temperature
55
175
°C
Source-drain diode
IS
source (diode forward) current
(DC)
Tmb =25 °C
75
A
ISM
peak source (diode forward)
current
Tmb =25 °C; pulsed; tp ≤ 10 s
400
A
Avalanche ruggedness
EAS
non-repetitive avalanche energy
unclamped inductive load;
IAS = 60 A; tp = 0.1 ms; VDD ≤ 25 V;
RGS =50 ; VGS = 5 V; starting
360
mJ
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