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參數(shù)資料
| 型號(hào)： | 934056688116 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 934056688116 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ100B
Fig.1. Test circuit for V
CEOsust.
Fig.2. Oscilloscope display for V
CEOsust.
Fig.3. Normalised power dissipation.
PD% = 100
PD/PD
25C = f (Tmb)
!
Fig.4. Transient thermal impedance.
Zth
j-lead = f(t); parameter D = tp/T
Fig.5. Typical DC current gain. h
FE = f(IC)
parameter V
CE
Fig.6. Typical DC current gain. h
FE = f(IC)
parameter V
CE
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
300R
1u
100u
10m
1
100
t / s
Zth / (K/W)
100
10
1
0.1
0.01
D=0
0.5
0.2
0.1
0.05
0.02
10u
1m
100m
10
D =
tp
T
P
t
D
tp
VCE / V
min
VCEOsust
IC / mA
10
100
250
0
0.01
0.05
0.1
0.5
1
2
3
2
5
10
15
20
30
50
IC/A
HFE
125 C
-40 C
25 C
VCE = 1V
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.01
0.05
0.1
0.5
1
2
3
2
5
10
15
20
30
50
IC/A
HFE
125 C
25 C
-40 C
VCE = 5V
May 2001
3
Rev 1.000
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