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參數(shù)資料
| 型號(hào)： | 934056688116 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 57K |
| 代理商： | 934056688116 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ100B
Fig.7. Collector-Emitter saturation voltage.
Fig.8. Base-Emitter saturation voltage.
Solid Lines = typ values, I
C/IB = 3
Solid Lines = typ values, I
C/IB = 3
INDUCTIVE SWITCHING
Fig.9. Test circuit inductive load.
Fig.10. Switching times waveforms with inductive load.
V
CC = 300 V; -VBE = 5 V, LC = 200 H; LB = 1 H
Fig.11. Inductive switching.
Fig.12. Inductive switching.
tfi = f(h
FE)
tfi = f(I
C)
0.01
0.02
0.05
0.1
0.2
0.5
1
2
0
0.2
0.4
0.6
0.8
1
1.2
IC/A
VCEsat/V
0.01
0.02
0.05
0.1
0.2
0.5
1
2
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
IC/A
VBEsat/V
LB
IBon
-VBB
LC
T.U.T.
VCC
IC
IB
ICon
IBon
-IBoff
t
ts
tf
toff
10 %
90 %
23
45
67
89
10
11
0
50
100
150
200
HFE GAIN (IC/IB)
tfi /ns
IC = 1.5A
IC = 1A
IC = 0.5A
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
50
100
150
200
250
IC/A
tfi /ns
IC/IB = 10
IC/IB = 5
May 2001
4
Rev 1.000
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