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參數(shù)資料
| 型號： | 934056689127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 920 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT-365C, 3 PIN |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 145K |
| 代理商： | 934056689127 |
2003 Feb 26
3
Philips Semiconductors
Product specication
GSM900 EDGE power module
BGF944
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
Tmb =25 °C; VS = 26 V; PL = 2.5 W; f = 920 to 960 MHz; ZS =ZL =50 ; unless otherwise specied.
Note
1. GPi is small signal in-band gain.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VS
DC supply voltage
30
V
PD
input drive power
100
mW
PL
load power
24
W
Tstg
storage temperature
30
+100
°C
Tmb
operating mounting base temperature
20
+90
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IDQ
quiescent current (pin 2)
PD =0mW
280
320
mA
P1dB
load power
at 1 dB gain compression
13
17
W
Gp
power gain
27
29
31
dB
G
p freq
gain atness over frequency
range
0.2
1
dB
G
p pwr
gain atness over power band PL = 25 mW up to 2.5 W
0.8
0.2
+0.2
dB
GOB
out of band gain
small signal, PD = 0 dBm;
f < 920 MHz, f > 960 MHz
GPi max +1
note 1
dB
VSWRin
input VSWR
1.6:1
2:1
IMDr
reverse intermodulation
fi =fc ±200 kHz;
Pcarrier = 2.5 W;
Pinterference = 40 dBc;
66
60
dBc
H2
second harmonic
38
35
dBc
H3
third harmonic
61
58
dBc
stability
VSWR
≤ 3 : 1 through all
phases; VS2 =25to28V
all spurious outputs more than 60 dB
below desired signal
ruggedness
VSWR = 10 : 1 through all
phases; PL =5W
no degradation in output power
EDGE (PL = 2.5 W average)
η
efciency
12
15
%
SR200
spectral regrowth;
EDGE GSM signal
200 kHz
36
35
dBc
SR400
400 kHz
65
63
dBc
EVMrms
rms EDGE signal distortion
0.4
1.2
%
EVMM
peak EDGE signal distortion
1.2
4
%
Intermodulation distortion (PL = 2.5 W average)
d3
third order intermodulation
carrier spacing = 200 kHz
45
40
dBc
d5
fth order intermodulation
52
dBc
d7
seventh order intermodulation
60
dBc
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