參數(shù)資料
型號: 934056689127
廠商: NXP SEMICONDUCTORS
元件分類: 放大器
英文描述: 920 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: PLASTIC, SOT-365C, 3 PIN
文件頁數(shù): 9/14頁
文件大小: 145K
代理商: 934056689127
2003 Feb 26
4
Philips Semiconductors
Product specication
GSM900 EDGE power module
BGF944
handbook, halfpage
MBL813
04
8
12
16
29.2
28.4
Gp
(dB)
PL (AV) (W)
Gp
η
(%)
27.6
27.2
28
50
30
10
0
20
40
28.8
Fig.2
GSM EDGE power gain and efficiency as
functions of load power; typical values.
f = 940 MHz.
handbook, halfpage
MBL814
57
04
12
69
8
26
10
67
65
63
61
PL (AV) (W)
ACPR
(dBc)
59
Fig.3
GSM EDGE ACPR at 400 kHz as a function
of load power; typical values.
f = 940 MHz.
handbook, halfpage
04
12
4
EVM
(%)
PL (AV) (W)
3
1
0
2
8
26
10
MBL815
Fig.4
GSM EDGE rms EVM as a function of
average load power; typical values.
f = 940 MHz.
handbook, halfpage
04
12
0
4
8
2
6
10
8
26
10
PL (AV) (W)
EVM
(%)
MBL816
Fig.5
GSM EDGE peak EVM as function of
average load power; typical values.
f = 940 MHz.
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