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參數資料
| 型號： | 934056701127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 40 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LOW PROFILE TO-220AB, I2PAK-3 |
| 文件頁數： | 13/15頁 |
| 文件大?。?/td> | 338K |
| 代理商： | 934056701127 |
Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS standard level FET
Product data
Rev. 02 — 7 November 2001
7 of 15
9397 750 09059
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS =25V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa32
0
1
2
3
4
5
-60
0
60
120
180
(V)
max
min
typ
VGS(th)
Tj (C)
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
0
2
4
6
max
typ
min
VGS (V)
ID
(A)
03ne62
0
20
40
60
80
100
0
20406080
ID (A)
gfs
(S)
03ne67
0
2000
4000
6000
8000
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
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