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| 型號(hào)： | 934056701127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 75 A, 40 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LOW PROFILE TO-220AB, I2PAK-3 |
| 文件頁(yè)數(shù)： | 9/15頁(yè) |
| 文件大小： | 338K |
| 代理商： | 934056701127 |
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Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS standard level FET
Product data
Rev. 02 — 7 November 2001
3 of 15
9397 750 09059
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
VGS ≥ 4.5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Continuous drain current as a function of
mounting base temperature.
Tmb =25 °C; IDM single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03na19
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
200
Pder
(%)
Tmb (C)
03ne93
0
50
100
150
200
25
50
75
100
125
150
175
200
Tmb (C)
ID
(A)
Capped at 75 A due to package
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
03ne68
1
10
102
103
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
RDSon = VDS / ID
1 ms
tp = 10 s
100 s
Capped at 75 A due to package
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