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參數(shù)資料
| 型號： | 934056745118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 47 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 10/14頁 |
| 文件大小： | 256K |
| 代理商： | 934056745118 |
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 16 May 2001
5 of 14
9397 750 08243
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 250 A; VGS =0V
100
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C2
3
4
V
Tj = 175 °C1
V
IDSS
drain-source leakage current
VGS =0V; VDS = 100 V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VDS =0V; VGS = ±20 V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =25A;
Tj =25 oC
20
28
m
Tj = 175 °C
76
m
Dynamic characteristics
Qg(tot)
total gate charge
ID = 40 A; VDD =80V;
66
nC
Qgs
gate-source charge
12
nC
Qgd
gate-drain (Miller) charge
21
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 13
2320
3100
pF
Coss
output capacitance
315
378
pF
Crss
reverse transfer capacitance
187
256
pF
td(on)
turn-on delay time
VDD = 30 V; RD = 1.2 ;
VGS =10V; RG =10
15
23
ns
tr
rise time
70
105
ns
td(off)
turn-off delay time
83
116
ns
tf
fall time
45
63
ns
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS =0V;
0.85
1.2
V
trr
reverse recovery time
IS =47A;
dIS/dt = 100 A/s;
VGS = -10 V; VR =30V
66
ns
Qr
recovered charge
0.24
C
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