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參數(shù)資料
| 型號(hào)： | 934056745118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 47 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 12/14頁 |
| 文件大?。?/td> | 256K |
| 代理商： | 934056745118 |
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 16 May 2001
7 of 14
9397 750 08243
Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 12. Forward transconductance as a function of
drain current; typical values.
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
2.5
-60
-20
20
1
0.5
0
1.5
2
60
100
140
180
3.5
V
GS(th)
(V)
T
j
(
o
C)
3
4
4.5
max
typ
min
003aaa023
2%
typ
98%
10-1
10-2
10-3
10-4
10-5
10-6
0
1
2
345
ID
(A)
VGS (V)
003aaa078
0
20
40
60
80
100
45
40
35
30
25
20
15
10
5
0
gfs
(S)
ID (A)
003aaa104
Ciss
Coss
Crss
5
4
3
2
1
0
Ciss,
Coss,
Crss
(nF)
110
102
10-2
10-1
VDS (V)
003aaa105
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