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參數(shù)資料
| 型號(hào)： | 934056750118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 9 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 245K |
| 代理商： | 934056750118 |
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Philips Semiconductors
Si4800
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 13 July 2001
2 of 13
9397 750 08412
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
30
V
ID
drain current
Tamb =25 °C; pulsed; tp ≤ 10 s
9A
Ptot
total power dissipation
Tamb =25 °C; pulsed; tp ≤ 10 s
2.5
W
Tj
junction temperature
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 9 A; Tj =25 °C
15.5
18.5
m
VGS = 4.5 V; ID = 7 A; Tj =25 °C
27.5
33
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
30
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current
9A
7A
IDM
peak drain current
40
A
Ptot
total power dissipation
2.5
W
1.6
W
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
Source-drain diode
IS
source (diode forward) current
Tamb =25 °C; pulsed; tp ≤ 10 s
2.3
A
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