參數(shù)資料
型號(hào): 934056750118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 9 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝: PLASTIC, SMD, SO-8
文件頁數(shù): 9/13頁
文件大?。?/td> 245K
代理商: 934056750118
Philips Semiconductors
Si4800
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 13 July 2001
5 of 13
9397 750 08412
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VGS(th)
gate-source threshold voltage
ID = 250 A; VDS =VGS; Tj =25 °C
0.8
V
IDSS
drain-source leakage current
VDS =24V; VGS =0V
Tj =25 °C
1
A
Tj =55 °C
5
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
100
nA
ID(on)
On-state drain current
VDS ≥ 5; VGS =10V
30
A
RDSon
drain-source on-state resistance
VGS = 10 V; ID =9A; Figure 7 and 8
15.5
18.5
m
VGS = 4.5 V; ID =7A; Figure 7 and 8
27.5
33
m
Dynamic characteristics
gfs
forward transconductance
VDS =15V; ID =9A
19
S
Qg(tot)
total gate charge
ID = 9 A; VDD =15V; VGS =5V; Figure 13
19
nC
Qgs
gate-source charge
4
nC
Qgd
gate-drain (Miller) charge
7.5
nC
td(on)
turn-on delay time
VDD =15V; RD =15 ; VGS =10V; RG =6
11
16
ns
tr
rise time
815
ns
td(off)
turn-off delay time
22
30
ns
tf
fall time
915
ns
Source-drain (reverse) diode
VSD
source-drain (diode forward) voltage IS = 2.3A; VGS =0V; Figure 12
0.7
1.2
V
trr
reverse recovery time
IS = 2.3 A; dIS/dt = 100 A/s; VGS =0V
50
80
ns
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