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參數(shù)資料
| 型號(hào)： | 934056779118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 25 V, 0.00245 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 11/12頁(yè) |
| 文件大?。?/td> | 288K |
| 代理商： | 934056779118 |
Philips Semiconductors
PSMN002-25 series
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 22 October 2001
8 of 13
9397 750 08315
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °C and 175 °C; VGS =0V
ID = 75 A; VDD = 15 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03af43
0
10
20
30
40
50
60
70
80
90
100
0.0
0.5
1.0
1.5
VSD (V)
IS
(A)
Tj = 25 C
175 C
VGS = 0 V
03af45
0
1
2
3
4
5
6
0
50
100
150
QG (nC)
VGS
(V)
VDD = 15 V
ID = 75 A
Tj = 25 C
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