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參數(shù)資料
| 型號： | 934056779118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 25 V, 0.00245 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 288K |
| 代理商： | 934056779118 |
Philips Semiconductors
PSMN002-25 series
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 22 October 2001
5 of 13
9397 750 08315
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C25
V
Tj = 55 °C22
V
VGS(th)
gate-source threshold voltage
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.4
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS =25V; VGS =0V
Tj =25 °C
0.02
1
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±15 V; VDS =0V
10
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
2.45
2.9
m
Tj = 175 °C
4.7
5.2
m
Tj =25 °C
2.2
2.6
m
Dynamic characteristics
Qg(tot)
total gate charge
ID = 75 A; VDD =15V; VGS =5V;
140
nC
Qgs
gate-source charge
34
nC
Qgd
gate-drain (Miller) charge
60
nC
Ciss
input capacitance
VGS =0V; VDS = 25 V; f = 1 MHz;
10400
pF
Coss
output capacitance
2380
pF
Crss
reverse transfer capacitance
1650
pF
td(on)
turn-on delay time
VDD =15V; ID = 12 A; VGS =5V;
RG =6 ; resistive load
53
ns
tr
turn-on rise time
175
ns
td(off)
turn-off delay time
355
ns
tf
turn-off fall time
285
ns
Source-drain diode
VSD
0.85
1.2
V
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