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參數(shù)資料
| 型號(hào)： | 934056789118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 50 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, LFPAK-5 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 224K |
| 代理商： | 934056789118 |
Philips Semiconductors
PH5330
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 07 February 2002
3 of 12
9397 750 09391
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
VGS ≥ 10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
Tmb =25 °C; IDM is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03ah31
0
40
80
120
0
50
100
150
200
Tmb (C)
Pder
(%)
03ag87
0
40
80
120
0
50
100
150
200
Tmb (C)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ag88
1
10
102
103
10-1
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
RDSon = VDS / ID
1 ms
tp = 10 s
100 s
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