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參數(shù)資料
| 型號： | 934056789118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, LFPAK-5 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 224K |
| 代理商： | 934056789118 |
Philips Semiconductors
PH5330
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 07 February 2002
5 of 12
9397 750 09391
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 10 mA; VGS = 0 V
30
--V
VGS(th)
gate-source threshold voltage
1
1.9
2.5
V
IDSS
drain-source leakage current
VDS =30V; VGS =0V; Tj =25 °C
-
0.06
1
A
IGSS
gate-source leakage current
VGS = ±16 V; VDS = 0 V
-
0.9
10
A
RDSon
drain-source on-state resistance
-
4.6
5.3
m
-
8.0
10
m
Dynamic characteristics
gfs
forward transconductance
30
50
-
S
Qg(tot)
total gate charge
-40
-
nC
Qgs
gate-source charge
-
7
-
nC
Qgd
gate-drain (Miller) charge
-
8
-
nC
Ciss
input capacitance
-2200 -pF
Coss
output capacitance
-
600
-
pF
Crss
reverse transfer capacitance
-
330
-
pF
td(on)
turn-on delay time
VDD =10V; ID = 20 A; VGS =10V;RG = 4.7
-20
-
ns
tr
rise time
-62
-
ns
td(off)
turn-off delay time
-
59
-
ns
tf
fall time
-18
-
ns
Source-drain (reverse) diode
VSD
-
0.85
1.11
V
trr
reverse recovery time
IS = 40 A; dIS/dt = 50 A/s; VGS = 0 V
-
60
-
ns
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