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| 型號(hào)： | 934056811127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 61 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 11/14頁(yè) |
| 文件大?。?/td> | 321K |
| 代理商： | 934056811127 |
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Philips Semiconductors
BUK9518-55A; BUK9618-55A
TrenchMOS logic level FET
Product data
Rev. 01 — 27 August 2001
6 of 14
9397 750 08461
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
0.85
1.2
V
trr
reverse recovery time
IS = 20 A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
53
ns
Qr
recovered charge
101
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 sTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ne45
0
50
100
150
200
250
02468
10
VDS (V)
ID
(A)
2.2
3
4
5
8
6
VGS (V) = 10
03ne44
10
12
14
16
18
20
3579
11
13
15
VGS (V)
RDSon
(m
)
03ne46
0
5
10
15
20
25
30
35
40
0
50
100
150
200
ID (A)
RDSon
(m
)
5
4
3
3.4
3.8
VGS (V) =
03ne89
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (C)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
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