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參數(shù)資料
| 型號： | 934056811127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 61 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 13/14頁 |
| 文件大小： | 321K |
| 代理商： | 934056811127 |
Philips Semiconductors
BUK9518-55A; BUK9618-55A
TrenchMOS logic level FET
Product data
Rev. 01 — 27 August 2001
8 of 14
9397 750 08461
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
VDS =25V
Tj =25 °C; ID =25A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
VGS =0V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
03ne43
0
10
20
30
40
50
01
23
4
VGS (V)
ID
(A)
Tj = 175 C
Tj = 25 C
03ne41
0
1
2
3
4
5
0
5
10
15
20
25
30
35
QG (nC)
VGS
(V)
VDD = 44 V
VDD = 14 V
03ne40
0
20
40
60
80
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (V)
IS
(A)
Tj = 175 C
Tj = 25 C
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