參數(shù)資料
型號: 934056838112
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC, LDMOST, 2 PIN
文件頁數(shù): 7/14頁
文件大小: 136K
代理商: 934056838112
2002 Aug 02
2
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
BLF0810-180; BLF0810S-180
FEATURES
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (800 MHz to 1 GHz)
Internally matched for ease of use.
APPLICATIONS
Common source class-AB operation applicable in the
860 to 960 MHz frequency range
CDMA and multi carrier applications.
DESCRIPTION
180 W LDMOS power transistor for base station
applications at frequencies from 800 MHz to 1000 MHz.
Typical CDMA IS95 performance at standard settings at a
supply voltage of 28 V and IDQ = 1125 mA, channel
bandwidth is 30 kHz, adjacent channels at
± 750 kHz and
at
± 1.98 MHz:
Output power = 35 W
Gain = 15.6 dB
Efficiency = 26 %
ACPR <
45 dBc at 750 kHz and BW = 30 kHz
ACPR <
63 dBc at 1.98 MHz and BW = 30 kHz
PINNING - SOT502A
PINNING - SOT502B
PIN
DESCRIPTION
1drain
2
gate
3
source; connected to flange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline SOT502A (BLF0810-180)
PIN
DESCRIPTION
1drain
2
gate
3
source; connected to flange
1
Top view
MBL105
2
3
Fig.2 Simplified outline SOT502B (BLF0810S-180)
QUICK REFERENCE DATA
Typical RF performance at Th =25 °C in a common source test circuit.
Note
1.
IS95 CDMA (Pilot, Paging, Sync, and Trafic Codes 8 trough 13)
2.
ACPR 750 kHz at BW = 30 kHz
3.
ACPR 1.98 MHz at BW = 30 kHz
4.
3 adjacent carriers with 32 channels walsh codes each.
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
η
D
(%)
d3
(dBc)
ACPR
(dB)
Class-AB (2-tone)
f1 = 890.0
f2 = 890.1
28
140 (PEP)
15.2
35
30
CDMA(1)
881.5
28
32
15.6
26
<
45 (2)
<
63 (3)
CDMA multi carrier
signal(4)
881.5
28
14
15.6
16
<
52 (2)
<
56 (3)
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