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參數(shù)資料
| 型號(hào)： | 934056838112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁(yè)數(shù)： | 9/14頁(yè) |
| 文件大小： | 136K |
| 代理商： | 934056838112 |
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2002 Aug 02
4
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
BLF0810-180; BLF0810S-180
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th =25 °C;.
Note
1.
IS95 CDMA (Pilot, Paging, Sync, and Trafic Codes 8 trough 13)
2.
ACPR 750 kHz at BW = 30 kHz
3.
ACPR 1.98 MHz at BW = 30 kHz
4.
3 adjacent carriers with 32 channels walsh codes each.
Ruggedness in class-AB operation
The BLF0810-180 and BLF0810S-180 are capable of withstanding a load mismatch corresponding to VSWR = 15 : 1
through all phases at VDS =27V; PL = 126 W (PEP).
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
IDQ
(mA)
Gp
(dB)
η
D
(%)
d3
(dBc)
ACPR
(dB)
Class-AB (2-tone)
f1 = 890.0
f2 = 890.1
28
140 (PEP)
1125
15.2
35
30
CDMA(1)
881.5
28
32
1250
15.6
26
<
45 (2)
<
63 (3)
CDMA multi carrier
signal(4)
881.5
28
14
1250
15.6
16
<
52 (2)
<
56 (3)
0
10
20
30
40
50
0
50
100
150
PL (PEP) (W)
η
(%)
14
14.5
15
15.5
16
16.5
17
gain
(dB)
η(1,2,3)
(6)
(4)
(5)
Fig.3
Two tone power gain and efficiency as
functions of the load power at different
temperatures.
VDS =27 V;IDQ =1.1 A; f1 = 890.0 MHz; f2 =890.1 MHz.
Efficiency at Theatsink: (1) = 40 °C
(2) = 20
°C
(3) = 80
°C
Gain at Theatsink:
(4) =
40 °C
(5) = 20
°C
(6) = 80
°C
-60
-50
-40
-30
-20
0
50
100
150
P
L (PEP) (W)
d
3
(dBc)
(1)
(3)
(2)
Fig.4
Third order intermodulation distortion as a
function of the load power at different
temperatures.
VDS =27 V;IDQ =1.1 A; f1 = 890.0 MHz; f2 =890.1 MHz
Theatsink: (1) = 40 °C
(2) = 20
°C
(3) = 80
°C
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