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參數(shù)資料
| 型號(hào)： | 934056839135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 2500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大小： | 268K |
| 代理商： | 934056839135 |
Philips Semiconductors
PHT2NQ10T
N-channel TrenchMOS transistor
Product data
Rev. 01 — 16 October 2001
5 of 12
9397 750 08918
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 A; VGS =0V
Tj =25 °C
100
120
V
Tj = 55 °C89
V
VGS(th)
gate-source threshold voltage
Tj =25 °C
234V
Tj = 150 °C
1.2
V
Tj = 55 °C
6V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C
125
A
Tj = 150 °C
4
250
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
10
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
315
430
m
Tj = 150 °C
725
990
m
Dynamic characteristics
gfs
forward transconductance
VDS =5V; ID = 2.5 A
3
S
Qg(tot)
total gate charge
5.1
nC
Qgs
gate-source charge
1
nC
Qgd
gate-drain (Miller) charge
2.1
nC
Ciss
input capacitance
160
pF
Coss
output capacitance
29
pF
Crss
reverse transfer capacitance
18
pF
td(on)
turn-on delay time
VDD =50V; RD =27 ; VGS =10V; RG =6
4.5
ns
tr
rise time
7.7
ns
td(off)
turn-off delay time
7.8
ns
tf
fall time
2.5
ns
Source-drain diode
VSD
0.9
1.5
V
trr
reverse recovery time
IS = 2.5 A; dIS/dt = 100 A/s; VGS =0V
45
ns
Qr
recovered charge
90
nC
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