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參數(shù)資料
| 型號： | 934056839135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 268K |
| 代理商： | 934056839135 |
Philips Semiconductors
PHT2NQ10T
N-channel TrenchMOS transistor
Product data
Rev. 01 — 16 October 2001
6 of 12
9397 750 08918
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ag28
0
2
4
6
8
10
01
23
45
VDS (V)
ID
(A)
6 V
6.5 V
Tj = 25C
VGS = 10V
4.5 V
5 V
5.5 V
7 V
03ag30
0
2
4
6
02
46
8
VGS (V)
ID
(A)
VDS > ID X RDSon
Tj = 25C
150C
03ag29
0.1
0.2
0.3
0.4
0.5
0.6
02468
10
ID (A)
RDSon
(
)
10 V
VGS = 6V
Tj = 25C
6.5 V
7 V
03aa29
0
0.5
1
1.5
2
2.5
3
-60
0
60
120
180
Tj (
oC)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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