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參數(shù)資料
| 型號： | 934056842118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 66 A, 25 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 286K |
| 代理商： | 934056842118 |
Philips Semiconductors
PHP/PHB/PHD66NQ03LT
TrenchMOS logic level FET
Product data
Rev. 04 — 9 September 2002
5 of 14
9397 750 10158
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
25
--V
Tj = 55 °C
22
--V
VGS(th)
gate-source threshold voltage
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
V
Tj = 55 °C
-
2.3
V
IDSS
drain-source leakage current
VDS =25V; VGS =0V
Tj =25 °C
-
0.05
10
A
Tj = 175 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±5 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
-
12.3
16
m
Tj = 175 °C
-
22.1
28.8
m
VGS =10V; ID =25A
Tj =25 °C
-
9.1
12
m
Dynamic characteristics
gfs
forward transconductance
VDS =25V; ID =30A
-
40
-
S
Qg(tot)
total gate charge
-12
-
nC
Qgs
gate-source charge
-
4.5
-
nC
Qgd
gate-drain (Miller) charge
-
3.6
-
nC
Ciss
input capacitance
-
860
-
pF
Coss
output capacitance
-
330
-
pF
Crss
reverse transfer capacitance
-
145
-
pF
td(on)
turn-on delay time
VDD =15V; ID = 25 A; VGS =5V;
RG = 5.6 ; resistive load
-
1525ns
tr
rise time
-
90
135
ns
td(off)
turn-off delay time
-
25
40
ns
tf
fall time
-
2540ns
Source-drain diode
VSD
-
0.95
1.2
V
trr
reverse recovery time
IS = 10 A; dIS/dt = 100 A/s; VGS =0V
-
32
-
ns
Qr
recovered charge
-
20
-
nC
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