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參數(shù)資料
| 型號： | 934056842118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 66 A, 25 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 286K |
| 代理商： | 934056842118 |
Philips Semiconductors
PHP/PHB/PHD66NQ03LT
TrenchMOS logic level FET
Product data
Rev. 04 — 9 September 2002
2 of 14
9397 750 10158
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ T
j ≤ 175 °C
-
25
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
-
66
A
Tmb =25 °C; VGS =5V
-
57
A
Ptot
total power dissipation
Tmb =25 °C
-
93
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C
9.1
12
m
VGS =5V; ID = 25 A; Tj =25 °C
12.3
16
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ Tj ≤ 175 °C
-
25
V
VDGR
drain-gate voltage (DC)
25
°C ≤ Tj ≤ 175 °C; RGS =20k
-25
V
ID
drain current (DC)
-57
A
-40
A
Tmb =25 °C; VGS =10V
-
66
A
Tmb = 100 °C; VGS =10V
-
45
A
VGS
gate-source voltage
-
±20
V
IDM
peak drain current
-
228
A
Ptot
total power dissipation
-93
W
Tstg
storage temperature
55
+175
°C
Tj
junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
-
57
A
ISM
peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 s
-
228
A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID =43A;
tp = 0.15 ms; VDD ≤ 15 V; RGS =50 ;
VGS = 10 V; starting Tj =25 °C
-90
mJ
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