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參數資料
| 型號： | 934056843118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數： | 5/12頁 |
| 文件大?。?/td> | 251K |
| 代理商： | 934056843118 |
Philips Semiconductors
PSMN005-30K
TrenchMOS logic level FET
Product data
Rev. 01 — 6 March 2002
2 of 12
9397 750 09334
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
-
30
V
ID
drain current (DC)
Tsp =80 °C
-
20
A
Ptot
total power dissipation
Tsp =80 °C
-
3.5
W
Tj
junction temperature
-
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 15 A; Tj =25 °C
4.4
5.5
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
-
30
V
VGS
gate-source voltage (DC)
-
±20
V
ID
drain current (DC)
Tsp =80 °C; VGS = 10V
-
20
A
IDM
peak drain current
Tsp =25 °C; pulsed; tp ≤ 10 s
-
60
A
Ptot
total power dissipation
Tsp =80 °C
-
3.5
W
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tsp =80 °C
-
20
A
ISM
peak source (diode forward) current Tsp =25 °C; pulsed; tp ≤ 10 s
-
60
A
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