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參數(shù)資料
| 型號： | 934056843118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 251K |
| 代理商： | 934056843118 |
Philips Semiconductors
SI2302DS
N-channel enhancement mode eld-effect transistor
Product data
Rev. 02 — 20 November 2001
5 of 12
9397 750 09107
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID =10 A; VGS =0V
20
V
VGS(th)
gate-source threshold voltage
0.65
V
IDSS
drain-source leakage current
VDS =20V; VGS =0V
Tj =25 °C
0.01
1.0
A
Tj =55 °C
10
A
IGSS
gate-source leakage current
VGS = ±8 V; VDS =0V
10
100
nA
RDSon
drain-source on-state resistance
56
85
m
77
115
m
Dynamic characteristics
gfs
forward transconductance
VDS =5V; ID = 3.6 A
8
S
Qg(tot)
total gate charge
5.4
10
nC
Qgs
gate-source charge
0.65
nC
Qgd
gate-drain (Miller) charge
1.6
nC
Ciss
input capacitance
230
pF
Coss
output capacitance
125
pF
Crss
reverse transfer capacitance
80
pF
td(on)
turn-on delay time
VDD =10V; RL = 5.5 ; VGS = 4.5 V; RG =6
12
20
ns
tr
rise time
23
35
ns
td(off)
turn-off delay time
50
100
ns
tf
fall time
34
50
ns
Source-drain diode
VSD
0.8
1.2
V
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