參數(shù)資料
型號: 934056850118
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 8 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SMD, D2PAK-3
文件頁數(shù): 4/7頁
文件大小: 66K
代理商: 934056850118
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ105AB
Fig.7. Normalised power dissipation.
PD% = 100
PD/PD
25C = f (Tmb)
Fig.8. Typical DC current gain. h
FE = f(IC)
parameter V
CE
Fig.9. Typical DC current gain. h
FE = f(IC)
parameter V
CE
Fig.10. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat = f(IB); Tj=25C.
Fig.11. Base-Emitter saturation voltage.
Solid lines = typ values, V
BEsat = f(IC); at IC/IB =4.
Fig.12. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat = f(IC); at IC/IB =4.
0
20
40
60
80
100
120
140
Tmb /
C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0
0.4
0.8
1.2
1.6
2.0
0.01
0.10
1.00
10.00
IB/A
VCEsat/V
IC=1A
2A
3A
4A
0.01
0.05
0.1
0.3
1
2
3
5
10
2
5
10
15
20
30
50
IC/A
HFE
Tj=100C
25C
-40C
VCE=1V
0.1
0.5
1
2
5
10
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
IC/A
VBESAT/V
Tj=100C
-40C
25C
0.01
0.05
0.1
0.3
1
2
3
5
10
2
5
10
15
20
30
50
IC/A
HFE
Tj=100C
25C
-40C
VCE=5V
0.2
0.4
0.6
1
2
5
6
0
0.1
0.2
0.3
0.4
0.5
0.6
IC/A
VCESAT/V
Tj=100C
-40C
25C
October 2001
4
Rev 1.000
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