參數(shù)資料
型號: 934056851127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 75 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 11/14頁
文件大?。?/td> 314K
代理商: 934056851127
Philips Semiconductors
BUK9510-55A; BUK9610-55A
TrenchMOS logic level FET
Product data
Rev. 01 — 20 August 2001
6 of 14
9397 750 08555
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS =0V
-
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
-77
-
ns
Qr
recovered charge
-
230
-
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 sTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nd75
0
50
100
150
200
250
300
350
02468
10
VDS (V)
ID
(A)
VGS (V) = 10
2.2
3
4
5
6
8
03nf88
6
8
10
12
3579
11
13
15
VGS (V)
RDSon
(m
)
03nd76
0
5
10
15
20
25
0
50
100
150
200
250
ID (A)
RDSon
VGS (V) =
5
4
3 3.2
3.4 3.6 3.8
(m
)
03ne89
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (C)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
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