參數(shù)資料
型號: 934056851127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 75 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 7/14頁
文件大?。?/td> 314K
代理商: 934056851127
Philips Semiconductors
BUK9510-55A; BUK9610-55A
TrenchMOS logic level FET
Product data
Rev. 01 — 20 August 2001
2 of 14
9397 750 08555
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
[1]
Current is limited by power dissipation chip rating
[2]
Continuous current is limited by package
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
-
55
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
-
100
A
Ptot
total power dissipation
Tmb =25 °C
-
200
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
Tj =25 °C; VGS =5V; ID =25A
8
10
m
Tj =25 °C; VGS = 4.5 V; ID =25A
-
11
m
Tj =25 °C; VGS = 10 V; ID = 25 A
7
9
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
-
55
V
VDGR
drain-gate voltage (DC)
RGS =20k
-55
V
VGS
gate-source voltage (DC)
-
±15
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
-
100
A
-75
A
Tmb = 100 °C; VGS =5V; Figure 2
-70
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
-
400
A
Ptot
total power dissipation
Tmb =25 °C; Figure 1
-
200
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
-
100
A
-75
A
IDRM
pulsed reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
-
400
A
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID =75A;
VDS ≤ 55 V; VGS =5V; RGS =50 ;
starting Tmb =25 °C
-
333
mJ
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