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參數(shù)資料
| 型號(hào)： | 934056925112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 82K |
| 代理商： | 934056925112 |
2002 Aug 06
2
Philips Semiconductors
Product specication
L-band radar LDMOS transistor
BLL1214-250
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators,
reducing common mode inductance.
APPLICATIONS
L-band radar applications in the 1200 to 1400 MHz
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT502A) with a ceramic cap. The common source is
connected to the flange.
PINNING - SOT502A
PIN
DESCRIPTION
1
drain
2
gate
3
source, connected to ange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th =25 °C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF
OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
η
D
(%)
pulse
droop
(dB)
tr
(ns)
tf
(ns)
Pulsed class-AB;
tp = 1 ms; δ = 10%
1200 to 1400
36
150
250
>12
>42
<0.6
<100
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
75
V
VGS
gate-source voltage
±22
V
Ptot
total power dissipation
Th ≤ 70 °C; tp = 1 ms; δ = 10%
400
W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
200
°C
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