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參數(shù)資料
| 型號： | 934056925112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 934056925112 |
2002 Aug 06
4
Philips Semiconductors
Product specication
L-band radar LDMOS transistor
BLL1214-250
handbook, halfpage
048
Pi (W)
PL
(W)
16
300
0
100
200
12
MLD858
(1)
(3)
(2)
Fig.2
Load power as function of input power;
typical values.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
tp = 1 ms; δ = 10%.
handbook, halfpage
048
Pi (W)
PL
(W)
16
300
0
100
200
12
MLD859
(1)
(3)
(2)
Fig.3
Load power as function of input power;
typical values.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
tp = 100 s; δ = 10%.
handbook, halfpage
0
100
PL (W)
Gp
(dB)
300
16
12
4
0
8
200
MLD860
(3)
(1)
(2)
Fig.4
Power gain as function of load power;
typical values.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
tp = 1 ms; δ = 10%.
handbook, halfpage
0
100
PL (W)
Gp
(dB)
300
16
12
4
0
8
200
MLD861
(3)
(1)
(2)
Fig.5
Power gain as function of load power;
typical values.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
tp = 100 s; δ = 10%.
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