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參數(shù)資料
| 型號(hào)： | 934056948115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 100 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, UMT6, SOT-363, 6 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 83K |
| 代理商： | 934056948115 |
2002 Sep 10
2
Philips Semiconductors
Product specication
MMIC wideband amplier
BGA2712
FEATURES
Internally matched to 50
Wide frequency range (3.2 GHz at 3 dB bandwidth)
Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)
5 dBm saturated output power at 1 GHz
Good linearity (11 dBm IP3(out) at 1 GHz)
Unconditionally stable (K > 1.5).
APPLICATIONS
LNB IF amplifiers
Cable systems
ISM
General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
PINNING
PIN
DESCRIPTION
1VS
2, 5
GND2
3
RF out
4
GND1
6RF in
MAM455
13
2
4
1
63
2, 5
4
5
6
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: E2-.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VS
DC supply voltage
5
6
V
IS
DC supply current
12.3
mA
s
21
2
insertion power gain
f = 1 GHz
21.3
dB
NF
noise gure
f = 1 GHz
3.9
dB
PL(sat)
saturated load power
f = 1 GHz
4.8
dBm
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VS
DC supply voltage
RF input AC coupled
6V
IS
supply current
35
mA
Ptot
total power dissipation
Ts ≤ 90 °C
200
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
PD
maximum drive power
10
dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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