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參數(shù)資料
| 型號： | 934056948115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 100 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, UMT6, SOT-363, 6 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 83K |
| 代理商： | 934056948115 |
2002 Sep 10
6
Philips Semiconductors
Product specication
MMIC wideband amplier
BGA2712
handbook, halfpage
0
1000
f (MHz)
2000
4000
0
50
10
3000
20
30
40
MLD906
s12
2
(dB)
Fig.9
Isolation (
s122) as a function of frequency;
typical values.
IS = 12.3 mA; VS = 5 V; PD = 30 dBm; ZO =50 .
handbook, halfpage
0
f (MHz)
(1)
(2)
(3)
25
20
15
10
1000
2000
4000
3000
MLD907
s21
2
(dB)
Fig.10 Insertion gain (
s212) as a function of
frequency; typical values.
PD = 30 dBm; ZO =50 .
(1) IS = 15.1 mA; VS = 5.5 V.
(2) IS = 12.3 mA; VS =5V.
(3) IS = 10.1 mA; VS = 4.5 V.
handbook, halfpage
30
20
PD (dBm)
PL
(dBm)
0
(1)
(2)
(3)
10
5
10
0
10
MLD908
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
f = 1 GHz; ZO =50 .
(1) VS = 5.5 V.
(2) VS =5V.
(3) VS = 4.5 V.
handbook, halfpage
30
20
PD (dBm)
PL
(dBm)
0
(1)
(2)
(3)
10
5
10
0
10
MLD909
Fig.12 Load power as a function of drive power at
2.2 GHz; typical values.
f = 2.2 GHz; ZO =50 .
(1) VS = 5.5 V.
(2) VS =5V.
(3) VS = 4.5 V.
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