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參數(shù)資料
| 型號： | 934056949115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, SMD, UMT6, SC-88, SOT-363, 6 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 86K |
| 代理商： | 934056949115 |
2002 Aug 06
2
Philips Semiconductors
Product specication
MMIC wideband amplier
BGA2709
FEATURES
Internally matched to 50
Very wide frequency range (3.6 GHz at 3 dB bandwidth)
Flat 23 dB gain (DC to 2.6 GHz at 1 dB flatness)
12.5 dBm saturated output power at 1 GHz
High linearity (22 dBm OIP3 at 1 GHz)
Unconditionally stable (K > 1.2).
APPLICATIONS
Cable systems
LNB IF amplifiers
General purpose
ISM.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
PINNING
PIN
DESCRIPTION
1VS
2, 5
GND2
3
RF out
4
GND1
6
RF in
MAM455
13
2
4
1
63
2, 5
4
5
6
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: E3-.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VS
DC supply voltage
5
6
V
IS
DC supply current
23.5
mA
|s21|2
insertion power gain
f = 1 GHz
22.7
dB
NF
noise gure
f = 1 GHz
4
dB
PL(sat)
saturated load power
f = 1 GHz
12.5
dBm
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VS
DC supply voltage
RF input AC coupled
6V
IS
supply current
35
mA
Ptot
total power dissipation
Ts ≤ 90 °C
200
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
PD
maximum drive power
10
dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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