參數(shù)資料
型號: 934056949115
廠商: NXP SEMICONDUCTORS
元件分類: 放大器
英文描述: RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: PLASTIC, SMD, UMT6, SC-88, SOT-363, 6 PIN
文件頁數(shù): 6/12頁
文件大?。?/td> 86K
代理商: 934056949115
2002 Aug 06
3
Philips Semiconductors
Product specication
MMIC wideband amplier
BGA2709
THERMAL CHARACTERISTICS
CHARACTERISTICS
VS =5V; IS = 23.5 mA; Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to solder
point
Ptot = 200 mW; Ts ≤ 90 °C
300
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IS
supply current
19
23.5
32
mA
|s21|2
insertion power gain
f = 100 MHz
21
22.2
23
dB
f = 1 GHz
21
22.7
24
dB
f = 1.8 GHz
22
23.0
24
dB
f = 2.2 GHz
21
23.0
24
dB
f = 2.6 GHz
20
22.1
23
dB
f = 3 GHz
18
21.1
22
dB
RLIN
return losses input
f = 1 GHz
9
11
dB
f = 2.2 GHz
9
11
dB
RL OUT
return losses output
f = 1 GHz
17
20
dB
f = 2.2 GHz
20
24
dB
|s12|2
isolation
f = 1.6 GHz
31
33
dB
f = 2.2 GHz
34
36
dB
NF
noise gure
f = 1 GHz
4.0
4.4
dB
f = 2.2 GHz
4.4
4.9
dB
BW
bandwidth
at
|s
21|
2
3 dB below at gain at 1 GHz
3.1
3.6
GHz
K
stability factor
f = 1 GHz
1.3
1.7
f = 2 GHz
1.8
2.2
PL(sat)
saturated load power
f = 1 GHz
11
12.5
dBm
f = 2.2 GHz
5
7.5
dBm
PL 1 dB
load power
at 1 dB gain compression; f = 1 GHz
7
8.3
dBm
at 1 dB gain compression; f = 2.2 GHz
3
5.4
dBm
IP3(in)
input intercept point
f = 1 GHz
3
1
dBm
f = 2.2 GHz
7
9
dBm
IP3(out)
output intercept point
f = 1 GHz
20
22
dBm
f = 2.2 GHz
12
14
dBm
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