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參數(shù)資料
| 型號： | 934056955127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 34 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 274K |
| 代理商： | 934056955127 |
Philips Semiconductors
PHP32N06LT; PHB32N06LT
N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 06 November 2001
2 of 13
9397 750 09024
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
-
60
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
-
34
A
Ptot
total power dissipation
Tmb =25 °C
-
97
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
Tj =25 °C; VGS =5V; ID = 20 A
30
40
m
Tj =25 °C; VGS = 4.5 V; ID = 20 A
-
43
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
-
60
V
VDGR
drain-gate voltage (DC)
RGS =20k
-60
V
VGS
gate-source voltage (DC)
-
±15
V
VGSM
non-repetitive gate-source voltage
tp ≤ 50 s-
±20
V
ID
drain current (DC)
-34
A
-24
A
IDM
peak drain current
-
136
A
Ptot
total power dissipation
-97
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IS
reverse drain current (DC)
Tmb =25 °C
-
34
A
ISM
pulsed reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
-
136
A
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID =20A;
tp = 0.11 ms; VDS ≤ 25 V; VGS =5V;
RGS =50 ; starting Tj =25 °C
-
100
mJ
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