參數(shù)資料
型號(hào): 934056955127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 34 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 9/13頁
文件大小: 274K
代理商: 934056955127
Philips Semiconductors
PHP32N06LT; PHB32N06LT
N-channel enhancement mode eld effect transistor
Product data
Rev. 01 — 06 November 2001
5 of 13
9397 750 09024
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
60
--V
Tj = 55 °C
55
--V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS =VGS; Figure 9
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
V
Tj = 55 °C
-
2.3
V
IDSS
drain-source leakage current
VDS =60V; VGS =0V
Tj =25 °C
-
0.05
10
A
Tj = 175 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
-
2
100
nA
RDSon
drain-source on-state resistance
VGS =5V; ID =20A; Figure 7 and 8
Tj =25 °C
-
30
40
m
Tj = 175 °C
--84
m
VGS = 4.5 V; ID = 20 A;
-
31.5
43
m
VGS = 10 V; ID = 20 A;
-
26
37
m
Dynamic characteristics
Qg(tot)
total gate charge
ID = 20 A; VDD =44V; VGS =5V; Figure 13
-17
-
nC
Qgs
gate-source charge
-
3
-
nC
Qgd
gate-drain (Miller) charge
-
8.5
-
nC
Ciss
input capacitance
VGS =0V; VDS = 25 V; f = 1 MHz; Figure 11
-
920
1280 pF
Coss
output capacitance
-
160
200
pF
Crss
reverse transfer capacitance
-
100
155
pF
td(on)
turn-on delay time
VDS =30V; RL = 1.2 ; VGS =5V; RG =10 ;
-
14
-
ns
tr
rise time
-
120
-
ns
td(off)
turn-off delay time
-
45
-
ns
tf
fall time
-55
-
ns
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