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| 型號(hào)： | 934056957118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 10/14頁(yè) |
| 文件大?。?/td> | 268K |
| 代理商： | 934056957118 |
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Philips Semiconductors
PHP/PHB/PHD108NQ03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 11 September 2002
5 of 14
9397 750 10159
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Characteristics
Table 4:
Characteristics
Tj =25 °C unless otherwise specied.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 A; VGS =0V
Tj =25 °C
25
--V
Tj = 55 °C
22
--V
VGS(th)
gate-source threshold voltage
1-
2V
IDSS
drain-source leakage current
VDS =25V; VGS =0V
Tj =25 °C
-
0.05
1
A
Tj = 175 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
-
0.02
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
-
6.2
7.5
m
Tj = 175 °C
-
10
14
m
VGS = 10 V; ID = 25 A
-
5.1
6.0
m
Dynamic characteristics
Qg(tot)
total gate charge
-23
-
nC
Qgs
gate-source charge
-
8.4
-
nC
Qgd
gate-drain (Miller) charge
-
7.3
9.9
nC
Ciss
input capacitance
-
1990 -
pF
Coss
output capacitance
-
580
-
pF
Crss
reverse transfer capacitance
-
230
-
pF
td(on)
turn-on delay time
VDD =15V; RD = 0.6 ; VGS =5V; RG =10
-24
-
ns
tr
rise time
-
102
-
ns
td(off)
turn-off delay time
-
53
-
ns
tf
fall time
-54
-
ns
Source-drain diode
VSD
-
0.9
1.2
V
trr
reverse recovery time
IS = 20 A; dIS/dt = 100 A/s; VGS =0V;
VDS =25V
-34
-
ns
Qr
recovered charge
-
27
-
nC
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