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參數(shù)資料
| 型號(hào)： | 934056957118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 268K |
| 代理商： | 934056957118 |
Philips Semiconductors
PHP/PHB/PHD108NQ03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 11 September 2002
6 of 14
9397 750 10159
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
003aaa192
0
10
20
30
40
0
0.5
1
1.5
2
VDS (V)
ID
(A)
2.4 V
3 V
2.8 V
2.6 V
10 V
2.2 V
4 V
3.5 V
5 V
003aaa193
0
10
20
30
40
1234
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 175 °C
25
°C
003aaa194
0
0.02
0.04
0.06
0.08
0.1
0
5
10
15
20
ID (A)
RDSon
(
)
VGS = 2.8 V
3.5 V
2.6 V
3 V
5 V
10 V
03aa27
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (°C)
a
a
R
DSon
R
DSon 25
°C
()
------------------------------
=
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