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| 型號(hào)： | 934056958127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 12/14頁(yè) |
| 文件大?。?/td> | 268K |
| 代理商： | 934056958127 |
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Philips Semiconductors
PHP/PHB/PHD108NQ03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 11 September 2002
7 of 14
9397 750 10159
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
VGS = 0 V; f = 1 MHz
Tj =25 °C and 175 °C; VGS =0V
Fig 11. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
Tj (°C)
VGS(th)
(V)
max
typ
min
03aa36
10-6
10-5
10-4
10-3
10-2
10-1
01
23
VGS (V)
ID
(A)
max
typ
min
003aaa195
102
103
104
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
003aaa196
0
5
10
15
20
0.2
0.4
0.6
0.8
1
VSD (V)
IS
(A)
Tj = 25 °C
175
°C
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