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參數(shù)資料
| 型號： | 934056958127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 268K |
| 代理商： | 934056958127 |
Philips Semiconductors
PHP/PHB/PHD108NQ03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 11 September 2002
2 of 14
9397 750 10159
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3.
Limiting values
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ T
j ≤ 175
oC
-
25
V
VDGR
drain-gate voltage (DC)
25
°C ≤ T
j ≤ 175
oC; RGS =20k
-25
V
ID
drain current (DC)
-75
A
-60
A
VGS
gate-source voltage
-
±20
V
IDM
peak drain current
-
108
A
Ptot
total power dissipation
-
180
W
Tstg
storage temperature
55
+175
°C
Tj
junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
-
75
A
ISM
peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 s
-
108
A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID =43A;
tp = 0.25 ms; VDD ≤ 15 V; RGS =50 ;
VGS = 10 V; starting Tj =25 °C
-
180
mJ
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