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參數資料
| 型號： | 934056959118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 25 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數： | 10/13頁 |
| 文件大小： | 277K |
| 代理商： | 934056959118 |
Philips Semiconductors
PHP/PHB152NQ03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 20 February 2002
6 of 13
9397 750 09353
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS > ID xRDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ai33
0
20
40
60
80
0
0.2
0.4
0.6
0.8
1
VDS (V)
ID
(A)
2.5 V
5 V
Tj = 25 C
VGS = 2.3 V
10 V
2.7 V
2.9 V
3.1 V
3.3 V
3.5 V
03ai35
0
20
40
60
80
01234
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25 C
175 C
03ai34
0
0.004
0.008
0.012
0
20406080
ID (A)
RDSon
(
)
3.3 V
VGS = 3.1 V
Tj = 25 C
5V
10 V
3.5 V
03af18
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
Tj (C)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
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