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| 型號(hào)： | 934056959118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 25 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 9/13頁(yè) |
| 文件大?。?/td> | 277K |
| 代理商： | 934056959118 |
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Philips Semiconductors
PHP/PHB152NQ03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 20 February 2002
5 of 13
9397 750 09353
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C25
V
Tj = 55 °C22
V
VGS(th)
gate-source threshold voltage
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS =25V; VGS =0V
Tj =25 °C
0.05
1
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±15 V; VDS =0V
10
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
3.6
5
m
Tj = 175 °C
6.5
8.7
m
Tj =25 °C
34m
Dynamic characteristics
Qg(tot)
total gate charge
42
nC
Qgs
gate-source charge
13.5
nC
Qgd
gate-drain (Miller) charge
14.5
nC
Ciss
input capacitance
3550
pF
Coss
output capacitance
1020
pF
Crss
reverse transfer capacitance
400
pF
td(on)
turn-on delay time
VDD =15V; ID = 25 A; VGS =5V;
RG = 5.6 ; resistive load
28
ns
tr
rise time
115
ns
td(off)
turn-off delay time
86
ns
tf
fall time
77
ns
Source-drain diode
VSD
0.85
1.2
V
trr
reverse recovery time
IS = 10 A; dIS/dt = 100 A/s; VGS =0V
-
45
-
ns
Qr
recovered charge
-
40
-
nC
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