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| 型號(hào)： | 934056988118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 221K |
| 代理商： | 934056988118 |
Philips Semiconductors
PHK12NQ03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 22 March 2002
2 of 12
9397 750 09405
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3.
Limiting values
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
-
30
V
VGS
gate-source voltage
-
±20
V
ID
drain current
-12
A
IDM
peak drain current
-45
A
Ptot
total power dissipation
-
2.5
W
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
Source-drain diode
IS
source (diode forward) current
Tsp =25 °C
-
12
A
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