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參數(shù)資料
| 型號(hào)： | 934056988118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 221K |
| 代理商： | 934056988118 |
Philips Semiconductors
PHK12NQ03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 22 March 2002
5 of 12
9397 750 09405
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Characteristics
Table 4:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 A; VGS = 0 V
30
--V
VGS(th)
gate-source threshold voltage
1-
2V
IDSS
drain-source leakage current
VDS =24V; VGS =0V
Tj =25 °C
--1
A
Tj = 100 °C
--5
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
-
100
nA
RDSon
drain-source on-state resistance
-
1114m
-
8.9
10.5
m
Dynamic characteristics
gfs
forward transconductance
VDS =15V; ID =10A;
-
34
-
S
Qg(tot)
total gate charge
-
17.6
-
nC
Qgs
gate-source charge
-
4
-
nC
Qgd
gate-drain (Miller) charge
-
4.4
-
nC
Ciss
input capacitance
-
1335 -
pF
Coss
output capacitance
-
391
-
pF
Crss
reverse transfer capacitance
-
190
-
pF
td(on)
turn-on delay time
VDD =16V; RD =10 ; VGS = 10 V
-
10.6
-
ns
tr
rise time
-
11.7
-
ns
td(off)
turn-off delay time
-
37
-
ns
tf
fall time
-19
-
ns
Source-drain (reverse) diode
VSD
-
0.7
1.0
V
trr
reverse recovery time
IS = 2.3 A; dIS/dt = 100 A/s; VGS =0V
-
70
-
ns
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