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參數(shù)資料
| 型號(hào)： | 934056990118 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 12 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁(yè)數(shù)： | 6/7頁(yè) |
| 文件大?。?/td> | 222K |
| 代理商： | 934056990118 |
Philips Semiconductors
PI4884
TrenchMOS logic level FET
Product data
Rev. 02 — 12 April 2002
6 of 12
9397 750 09583
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
VGS = 2.2 V
ID
(A)
16
12
8
4
0
2.5 V
2.8 V
5 V
4 V
0
0.4
0.8
1.2
1.6
2.0
VDS (V)
003aaa162
20
16
12
8
4
0
ID
(A)
VGS (V)
01
2
4
3
150 οC
25 οC
003aaa163
RDSon
(m
)
40
0
160
200
120
80
ID (A)
16
04
8
12
VGS = 2.5 V
2.2 V
4 V
5 V
003aaa164
03aa27
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
Tj (
oC)
a
a
R
DSon
R
DSon 25
°C
()
------------------------------
=
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