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參數(shù)資料
| 型號： | 934056990118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 7/7頁 |
| 文件大小： | 222K |
| 代理商： | 934056990118 |
Philips Semiconductors
PI4884
TrenchMOS logic level FET
Product data
Rev. 02 — 12 April 2002
7 of 12
9397 750 09583
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
VGS = 0 V; f = 1 MHz
Tj =25 °C and 150 °C; VGS =0V
Fig 11. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
Tj (
oC)
VGS(th)
(V)
max
typ
min
03aa36
10-6
10-5
10-4
10-3
10-2
10-1
01
23
VGS (V)
ID
(A)
max
typ
min
Ciss
Coss
Crss
102
103
104
C
(pF)
1
10
102
10-1
VDS (V)
003aaa165
VSD (V)
IS
(A)
1
20
4
8
12
16
0
25 οC
0.4
0.6
0.8
150 οC
003aaa166
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